Capacitor comprising improved TaOx based dielectric

We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greate...

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Bibliographische Detailangaben

Hauptverfasser:	SCHNEEMEYER, LYNN FRANCES, VAN DOVER, ROBERT BRUCE, FLEMING, ROBERT MCLEMORE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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