Capacitor comprising improved TaOx based dielectric

We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greate...

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Hauptverfasser:	SCHNEEMEYER, LYNN FRANCES, VAN DOVER, ROBERT BRUCE, FLEMING, ROBERT MCLEMORE
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.