Capacitor comprising improved TaOx based dielectric
We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greate...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre ; ger |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SCHNEEMEYER, LYNN FRANCES VAN DOVER, ROBERT BRUCE FLEMING, ROBERT MCLEMORE |
| description | We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0880167B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0880167B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0880167B13</originalsourceid><addsrcrecordid>eNrjZDB2TixITM4syS9SSM7PLSjKLM7MS1fIBLLyy1JTFEIS_SsUkhKLgcyUzNSc1OSSosxkHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWgw0LzUvtSTeNcDAwsLA0MzcydCYCCUAt70sKg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Capacitor comprising improved TaOx based dielectric</title><source>esp@cenet</source><creator>SCHNEEMEYER, LYNN FRANCES ; VAN DOVER, ROBERT BRUCE ; FLEMING, ROBERT MCLEMORE</creator><creatorcontrib>SCHNEEMEYER, LYNN FRANCES ; VAN DOVER, ROBERT BRUCE ; FLEMING, ROBERT MCLEMORE</creatorcontrib><description>We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.</description><edition>7</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000906&DB=EPODOC&CC=EP&NR=0880167B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20000906&DB=EPODOC&CC=EP&NR=0880167B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHNEEMEYER, LYNN FRANCES</creatorcontrib><creatorcontrib>VAN DOVER, ROBERT BRUCE</creatorcontrib><creatorcontrib>FLEMING, ROBERT MCLEMORE</creatorcontrib><title>Capacitor comprising improved TaOx based dielectric</title><description>We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2000</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB2TixITM4syS9SSM7PLSjKLM7MS1fIBLLyy1JTFEIS_SsUkhKLgcyUzNSc1OSSosxkHgbWtMSc4lReKM3NoODmGuLsoZtakB-fWgw0LzUvtSTeNcDAwsLA0MzcydCYCCUAt70sKg</recordid><startdate>20000906</startdate><enddate>20000906</enddate><creator>SCHNEEMEYER, LYNN FRANCES</creator><creator>VAN DOVER, ROBERT BRUCE</creator><creator>FLEMING, ROBERT MCLEMORE</creator><scope>EVB</scope></search><sort><creationdate>20000906</creationdate><title>Capacitor comprising improved TaOx based dielectric</title><author>SCHNEEMEYER, LYNN FRANCES ; VAN DOVER, ROBERT BRUCE ; FLEMING, ROBERT MCLEMORE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0880167B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2000</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SCHNEEMEYER, LYNN FRANCES</creatorcontrib><creatorcontrib>VAN DOVER, ROBERT BRUCE</creatorcontrib><creatorcontrib>FLEMING, ROBERT MCLEMORE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SCHNEEMEYER, LYNN FRANCES</au><au>VAN DOVER, ROBERT BRUCE</au><au>FLEMING, ROBERT MCLEMORE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Capacitor comprising improved TaOx based dielectric</title><date>2000-09-06</date><risdate>2000</risdate><abstract>We have made the unexpected discovery that a dielectric layer (83) consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors (80), typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 mu coulomb/cm . In a currently preferred embodiment, the dielectric layer has composition Ta1-y A1y Ox Nz, with y SIMILAR 0.1, x SIMILAR 2.4, and z SIMILAR 0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre ; ger |
| recordid | cdi_epo_espacenet_EP0880167B1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Capacitor comprising improved TaOx based dielectric |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T06%3A56%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SCHNEEMEYER,%20LYNN%20FRANCES&rft.date=2000-09-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0880167B1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |