GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base su...

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Bibliographische Detailangaben

Hauptverfasser:	SHIBATA, TAKUMI, HIRAMATSU, KAZUMASA, MIYASHITA, KEIJI, OKAGAWA, HIROAKI, YAHASHI, KATSUNORI, KAZUYUKI, TADATOMO, SAWAKI, NOBUHIKO, OHUCHI, YOUICHIRO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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