GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof

A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base su...

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Bibliographische Detailangaben
Hauptverfasser: SHIBATA, TAKUMI, HIRAMATSU, KAZUMASA, MIYASHITA, KEIJI, OKAGAWA, HIROAKI, YAHASHI, KATSUNORI, KAZUYUKI, TADATOMO, SAWAKI, NOBUHIKO, OHUCHI, YOUICHIRO
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A GaN group crystal base member comprising a base substrate, a mask layer partially covering the surface of said base substrate to give a masked region, and a GaN group crystal layer grown thereon to cover the mask layer, which is partially in direct contact with the non-masked region of the base substrate, use thereof for a semiconductor element, manufacturing methods thereof and a method for controlling a dislocation line. The manufacturing method of the present invention is capable of making a part in the GaN group crystal layer, which is above a masked region or non-masked region, have a low dislocation density.