Process of final passivation of an integrated circuit device

A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.

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Bibliographische Detailangaben
Hauptverfasser: DE SANTI, GIORGIO, ZANOTTI, LUCA
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.