Process of final passivation of an integrated circuit device
A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition. |
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