Method for producing vias having variable sidewall profile
A via opening having a varying sidewall taper can be made by varying the proportion of polymers deposited on the sidewalls during the etch. For example, the proportion of a fluorine-containing etch gas and an inert carrier gas can be changed to etch smooth variably tapered vias in silicon oxide to e...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A via opening having a varying sidewall taper can be made by varying the proportion of polymers deposited on the sidewalls during the etch. For example, the proportion of a fluorine-containing etch gas and an inert carrier gas can be changed to etch smooth variably tapered vias in silicon oxide to ensure complete filling of the vias by a subsequently deposited layer of material. |
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