LAYER SEQUENCE WITH AT LEAST ONE EPITAXIAL, NON-C-AXIS ORIENTED HTSC THIN FILM OR WITH A LAYER OF A STRUCTURE CRYSTALLOGRAPHICALLY COMPARABLE TO HTSC

PCT No. PCT/DE96/02475 Sec. 371 Date Jun. 22, 1998 Sec. 102(e) Date Jun. 22, 1998 PCT Filed Dec. 18, 1996 PCT Pub. No. WO97/23896 PCT Pub. Date Jul. 3, 1997The invention relates to a layered structure with at least one epitaxial, non-c-axis oriented high Tc superconductor (HTSC) thin film with an ap...

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Bibliographische Detailangaben
Hauptverfasser:	POPPE, ULRICH, SEO, JIN-WON, DIVIN, YURI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PCT No. PCT/DE96/02475 Sec. 371 Date Jun. 22, 1998 Sec. 102(e) Date Jun. 22, 1998 PCT Filed Dec. 18, 1996 PCT Pub. No. WO97/23896 PCT Pub. Date Jul. 3, 1997The invention relates to a layered structure with at least one epitaxial, non-c-axis oriented high Tc superconductor (HTSC) thin film with an approximately tetragonal structure, in which the thin film having an orientation (-1,0,1) is formed on a cubic or pseudocubic (1,0,3) NdGaO3 substrate.