PROCESS FOR PRODUCING AN MOS TRANSISTOR

PROCESS FOR PRODUCING AN MOS TRANSISTOR

A MOS transistor has a gate electrode (33) having a T-shaped cross-section. The gate length is defined in a first structuring step by a spacer technique. The area of the gate electrode in the upper region is defined in a second structuring step. The MOS transistor can be produced with a channel leng...

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Bibliographische Detailangaben
1. Verfasser: LUSTIG, BERNHARD
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A MOS transistor has a gate electrode (33) having a T-shaped cross-section. The gate length is defined in a first structuring step by a spacer technique. The area of the gate electrode in the upper region is defined in a second structuring step. The MOS transistor can be produced with a channel length of less than 100 nm.