Epoxy resin composition to seal semiconductors and resin-sealed semiconductor device

An epoxy resin composition for sealing a semiconductor device comprising a semiconductor element, a base to support the semiconductor element and an epoxy resin composition covering only one surface of the device opposite to the base, comprises (A) epoxy resin, (B) hardener and (C) inorganic filler,...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA, MASAYUKI, TSURUMI, YUMIKO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	An epoxy resin composition for sealing a semiconductor device comprising a semiconductor element, a base to support the semiconductor element and an epoxy resin composition covering only one surface of the device opposite to the base, comprises (A) epoxy resin, (B) hardener and (C) inorganic filler, and gives a cured product which has (a) a flexural modulus of elasticity of 10 to 30 GPa at 23 DEG C and (b) a coefficient of linear expansion of 4 x 10/K to 10 x 10/K in a temperature range from 23 DEG C to the glass transition point, with the product of (a) and (b) being smaller than 2 x 10 GPa/K.