OPTICAL SEMICONDUCTOR COMPONENT WITH DEEP RIDGED WAVEGUIDE

PCT No. PCT/EP97/03584 Sec. 371 Date May 19, 1998 Sec. 102(e) Date May 19, 1998 PCT Filed Jun. 26, 1997 PCT Pub. No. WO98/00738 PCT Pub. Date Jan. 8, 1998For use in digital optical telecommunication systems, optical semiconductor components are shown having a transition region for the expansion of the mode field of a light wave in order to reduce losses when coupling to an optical fiber or an optical waveguide of a supporting plate. An optical semiconductor component contains a deep ridged waveguide (RIDGE) with a cover layer (DS) disposed on a substrate (SUB.) The ridged waveguide (RIDGE) has a first (MQW) and second (BULK) waveguide cores, these being separated by a separating layer (SEP). The thickness of this separating layer increases in a transition region (UB1) along a longitudinal direction (L) of the ridged waveguide (RIDGE), thus increasing the vertical distance between the two waveguide centers (MQW, BULK).