Method of forming a phosphorus doped silica glass film

There is provided a film forming method for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including phosphorus containing compound which has III valence phosphorus and has at leas...

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Bibliographische Detailangaben
Hauptverfasser:	TOKUMASU, NOBORU, MAEDA, KAZUO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	There is provided a film forming method for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including phosphorus containing compound which has III valence phosphorus and has at least one bond of phosphorus to which oxygen is bonded, a silicon containing insulating film including P2O3 (14, 15, 16 or 17) is formed on a deposition substrate (101), thereby reducing a fluidization temperature for planarization extremely.