Method of fabrication of an LED

A compound semiconductor layer (16) of a first conductivity type is formed on a substrate (14), and a diffusion region (26) of a second conductivity type is formed on the compound semiconductor layer (16). The light-emitting diode has a high emitted light power, using a large-diameter wafer.

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Bibliographische Detailangaben
Hauptverfasser:	TANINAKA, MASUMI, HAMANO, HIROSHI, NAKAMURA, YUKIO, OGIHARA, MITSUHIKO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A compound semiconductor layer (16) of a first conductivity type is formed on a substrate (14), and a diffusion region (26) of a second conductivity type is formed on the compound semiconductor layer (16). The light-emitting diode has a high emitted light power, using a large-diameter wafer.