DFB LASER DIODE STRUCTURE WITH COMPLEX OPTICAL GRATING COUPLING

PCT No. PCT/DE96/00837 Sec. 371 Date Nov. 25, 1997 Sec. 102(e) Date Nov. 25, 1997 PCT Filed May 13, 1996 PCT Pub. No. WO96/38890 PCT Pub. Date Dec. 5, 1996In the DFB laser diode structure, having complex optical grating coupling, the grating has a layer (52) made from volumetric index semiconductor...

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Hauptverfasser: STEGMUELLER, BERNHARD, BORCHERT, BERND
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:PCT No. PCT/DE96/00837 Sec. 371 Date Nov. 25, 1997 Sec. 102(e) Date Nov. 25, 1997 PCT Filed May 13, 1996 PCT Pub. No. WO96/38890 PCT Pub. Date Dec. 5, 1996In the DFB laser diode structure, having complex optical grating coupling, the grating has a layer (52) made from volumetric index semiconductor material, and a layer (53) made from volumetric absorption semiconductor material, the two layers (52, 53) being situated one above another and not being phase-shifted with respect to one another.