Modular type power semiconductor apparatus

An IGBT unit of a power semiconductor module which comprises a plurality of insulation substrates each of which mounting a plurality of semiconductor devices thereon which are to be operated in parallel within the module is provided. External terminals corresponding to each unit are disposed outside...

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Bibliographische Detailangaben
Hauptverfasser: TANAKA, AKIRA, SAITO, RYUICHI, KOIZUMI, MASAHIRO, OKADA, SENSUKE, KURIHARA, YASUTOSHI, KOIKE, YOSHIHIKO, KURIBAYASHI, SHIGEHISA, SUZUKI, KAZUHIRO, INOUE, HIROKAZU, SHIMIZU, HIDEO, KUSHIMA, TADAO, SONOBE, YUKIO, KAJIWARA, RYOICHI, NAKATSU, KINYA
Format: Patent
Sprache:eng ; fre ; ger
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Zusammenfassung:An IGBT unit of a power semiconductor module which comprises a plurality of insulation substrates each of which mounting a plurality of semiconductor devices thereon which are to be operated in parallel within the module is provided. External terminals corresponding to each unit are disposed outside the module for parallel operation thereof, thereby minimizing inductance between respective semiconductor devices and their wirings.