Stress control by fluorination of silica film

A method and apparatus for controlling the intrinsic stress level of a deposited silicon oxide film. In one embodiment, the method includes incorporating a select amount of a halogen element into the film to obtain a resulting film having the desired stress level. In another embodiment, the method o...

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Bibliographische Detailangaben
Hauptverfasser:	ROBLES, STUARDO, VERNA, AMRITA, NOWAK, ROMAULD, SINHA, ASHOK, PICKERING, JONATHAN C
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method and apparatus for controlling the intrinsic stress level of a deposited silicon oxide film. In one embodiment, the method includes incorporating a select amount of a halogen element into the film to obtain a resulting film having the desired stress level. In another embodiment, the method of the present invention includes the step of tuning the stress level of a silicon oxide film deposited under high density plasma conditions by incorporating a predetermined amount of fluorine into the film.