Diffused titanium resistor and method for fabricating same

Diffused titanium resistor and method for fabricating same

According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; de...

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Hauptverfasser: RAMAC, SAMUEL, C, HO, HERBERT LEI, FUGARDI, STEPHEN, GERARD, HAMMERL, ERWIN, DOBUZINSKY, DAVID MARK, STRONG, ALVIN WAYNE
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator RAMAC, SAMUEL, C
HO, HERBERT LEI
FUGARDI, STEPHEN, GERARD
HAMMERL, ERWIN
DOBUZINSKY, DAVID MARK
STRONG, ALVIN WAYNE
description According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Diffused titanium resistor and method for fabricating same
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