Diffused titanium resistor and method for fabricating same

According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.