Process for overcoming selectivity loss

The present invention provides a process for depositing a planarized metal film on a dielectric surface (26) having nonuniform conductor material deposits formed thereon. The planarized metal layer (30) is formed using a warm physical vapor deposition process at a temperature greater than about 150 DEG C, preferably greater then about 250 DEG C. The nonuniform deposits of electrically conducting material are typically formed during selective chemical vapor deposition of a metal in high aspect ratio, sub-half micron apertures. The selective CVD deposition is directly followed by warm physical vapor deposition to obtain a planarized metal film. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form interconnects occurs without the formation of oxides between the layers.