Heterostructure laser
The specification describes a heterostructure laser utilizing GaAs based materials that emits at 0.98 mu m and is thus suitable for pumping an erbium doped fiber waveguide amplifier. The composition and asymmetrical structure of the cladding layers of the laser is designed to give exceptional electr...
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | The specification describes a heterostructure laser utilizing GaAs based materials that emits at 0.98 mu m and is thus suitable for pumping an erbium doped fiber waveguide amplifier. The composition and asymmetrical structure of the cladding layers of the laser is designed to give exceptional electrical and optical confinement without the high levels of aluminum that are found to reduce the lifetime of high performing prior art devices. |
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