FIELD-EFFECT TRANSISTOR OF THE METAL-DIELECTRIC-SEMICONDUCTOR TYPE

A metal-insulator-semiconductor field-effect transistor comprising an insulation substrate (1) which has at least one source region (2) and at least one drain region (3) disposed on the surface thereof together with corresponding electrodes (4,5) and at least one semiconductor gate region (6) dispos...

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Hauptverfasser: MURASHEV, VIKTOR NIKOLAEVICH, PRIKHODKO, PAVEL SERGEEVICH, MIKHAILOV, VALERY ALEXANDROVICH, MORDKOVICH, VIKTOR NAUMOVICH, KRASNIKOV, GENNADY YAKOVLEVICH
Format: Patent
Sprache:eng ; fre ; ger
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