FIELD-EFFECT TRANSISTOR OF THE METAL-DIELECTRIC-SEMICONDUCTOR TYPE

FIELD-EFFECT TRANSISTOR OF THE METAL-DIELECTRIC-SEMICONDUCTOR TYPE

A metal-insulator-semiconductor field-effect transistor comprising an insulation substrate (1) which has at least one source region (2) and at least one drain region (3) disposed on the surface thereof together with corresponding electrodes (4,5) and at least one semiconductor gate region (6) dispos...

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Bibliographische Detailangaben
Hauptverfasser: MURASHEV, VIKTOR NIKOLAEVICH, PRIKHODKO, PAVEL SERGEEVICH, MIKHAILOV, VALERY ALEXANDROVICH, MORDKOVICH, VIKTOR NAUMOVICH, KRASNIKOV, GENNADY YAKOVLEVICH
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A metal-insulator-semiconductor field-effect transistor comprising an insulation substrate (1) which has at least one source region (2) and at least one drain region (3) disposed on the surface thereof together with corresponding electrodes (4,5) and at least one semiconductor gate region (6) disposed therebetween and on the surface of which a layer of a gate insulator (7) is disposed which has a gate electrode (8) disposed thereon, wherein at least one of said source region (2) or said drain region (3) is a metal conduction region and forms a Schottky barrier.