Nonvolatile semiconductor memory, and method of manufacturing the same
A method of manufacturing the semiconductor memory comprises element described below; (a) forming a first oxide film on a semiconductor substrate; (b) forming a polysilicon electrode on the first oxide film by sub-steps of forming a low impurity density polysilicon layer, forming a high impurity den...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A method of manufacturing the semiconductor memory comprises element described below; (a) forming a first oxide film on a semiconductor substrate; (b) forming a polysilicon electrode on the first oxide film by sub-steps of forming a low impurity density polysilicon layer, forming a high impurity density polysilicon layer, and forming a low impurity density polysilicon layer in this order; (c) forming a second oxide film on the polysilicon electrode. |
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