Magnetoresistive element having large low field magnetoresistance

Magnetoresistive elements according to this invention comprise magnetically soft material (33) in close proximity to the magnetoresistive material (32), exemplarily a perovskite manganite. The combination results in magnetic field "amplification", with large resistance changes attainable a...

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Bibliographische Detailangaben
Hauptverfasser:	HWANG, HAROLD YOONSUNG, BATLOGG, BERTRAM JOSEF, CHEONG, SANG WOOK
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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Beschreibung
Zusammenfassung:	Magnetoresistive elements according to this invention comprise magnetically soft material (33) in close proximity to the magnetoresistive material (32), exemplarily a perovskite manganite. The combination results in magnetic field "amplification", with large resistance changes attainable at relatively low applied fields. The invention exemplarily is embodied in magnetic sensors, e.g., magnetoresistive read/write heads (30).