Group-III nitride based light emitter

A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer (5) between a p-type cladding layer (6) and an active layer (4). The diode having a diffusion suppressive layer of the present invention has higher luminou...

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Bibliographische Detailangaben
Hauptverfasser:	WATABE, SHINICHI, OKAGAWA, HIROAKI, TADATOMO, KAZUYUKI, OHUCHI, YOUICHIRO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A group-III nitride based light emitter such as LED and LD, which has a double heterostructure and which comprises a diffusion suppressive layer (5) between a p-type cladding layer (6) and an active layer (4). The diode having a diffusion suppressive layer of the present invention has higher luminous intensity, greater forward voltage, and longer lifetime than the conventional diodes.