METHOD OF FORMING A FLUORINATED SILICON OXIDE LAYER USING PLASMA CHEMICAL VAPOR DEPOSITION

A method of forming a fluorinated silicon oxide dielectric layer by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by...

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Bibliographische Detailangaben
Hauptverfasser:	QIAN, LINGQIAN, SCHMIDT, MELVIN C, NOBINGER, GLENN L
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PLASMA TECHNIQUE PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of forming a fluorinated silicon oxide dielectric layer by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate to form a fluorinated silicon oxide layer on the surface of the substrate. The fluorinated layer formed has a dielectric constant which is less than that of a silicon oxide layer.