Copper alloys for chip and package interconnections and method of making

Copper alloys for chip and package interconnections and method of making

Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such...

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Bibliographische Detailangaben
Hauptverfasser: HU, CHAO-KUN, PEARSON, DALE JONATHAN, ANDRICACOS, PANAYOTIS C, HARPER, JAMES MCKELL EDWIN, UZOH, CYPRIAN EMEKA, DELIGIANNI, HARIKLIA, REYNOLDS, SCOTT KEVIN, TU, KING-NING
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ALLOYS
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FERROUS OR NON-FERROUS ALLOYS
METALLURGY
SEMICONDUCTOR DEVICES
TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin for improved electromigration resistance, low resistivity and good corrosion resistance that can be used in chip and package interconnections and a method of making such interconnections and conductors by first forming the copper alloy and then annealing it to cause the diffusion of the alloying element toward the grain boundaries between the grains in the alloy are disclosed.