Semiconductor device having capacitor

A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer, which covers the capacitor, and has a passivation layer which covers the interconnections of the capacitor. The passivation layer is composed of a phospho-silicate layer and a non-doped silicate layer formed sequentially from the interconnections side. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.