STACKED-TYPE COMPONENT AND METHOD FOR THE MANUFACTURE OF SAME

Method for the manufacture of a stacked-type capacitor and/or resistance consisting of alternating dielectric layers and conducting layers. The dielectric layers are deposited by polymerization of the elements derived from the dissociation, by remote nitrogen plasma, of an organo-siliceous or organo-germanium gas. The conducting layers are formed simultaneously by the deposition of a conducting polymer derived from the dissociation, by remote nitrogen plasma, of hydrogen sulphide or sulphur dichloride. The dielectric and conducting layers are deposited on a dielectric substrate placed on the surface of a rotating drum, the rotation being such that the same portion of dielectric substrate is successively opposite at least one dielectric deposition device and at least one conducting polymer deposition device, each dielectric or conducting deposition being preceded by masking of the areas where no layer is to be deposited.