Direct etch for thin film resistor using a hard mask

A method of etching a thin film resistor material, such as CrSi, for producing a thin film resistor, a non-photoresist hard mask is deposited on an exposed surface of thin film resistor material, a delineated portion of the hard mask is etched with a hydrogen peroxide etchant that does not affect th...

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Bibliographische Detailangaben
Hauptverfasser:	GASNER, JOHN T, GAUL, STEVE, LINN, JACK H, MCCARTY, CHRIS
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of etching a thin film resistor material, such as CrSi, for producing a thin film resistor, a non-photoresist hard mask is deposited on an exposed surface of thin film resistor material, a delineated portion of the hard mask is etched with a hydrogen peroxide etchant that does not affect the thin film resistor material to expose the material underneath, and the exposed thin film resistor material is etched with a second etchant that does not affect the hard mask. The second etchant may be a mixture of phosphoric acid, nitric acid and hydrofluoric acid The hard mask comprises TiW.