Article comprising a Si-based photodetector

Article comprising a Si-based photodetector

Si-based photodetectors according to the invention can have high speed (e.g., >/= 1 Gb/s) and high efficiency (e.g., >20%). The detectors include a relatively thin (e.g.,

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Bibliographische Detailangaben
1. Verfasser: LEVINE, BARRY FRANKLIN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Si-based photodetectors according to the invention can have high speed (e.g., >/= 1 Gb/s) and high efficiency (e.g., >20%). The detectors include a relatively thin (e.g.,