Method for manufacturing surface emitting laser diodes

The mfr. method involves using a semiconductor substrate, e.g. gallium arsenide, with a mechanical mask having controlled openings to make sides at typically 45 degrees. These sides can form Bragg reflectors by alternating materials, notably gallium arsenide and gallium aluminium arsenide. In a firs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HIRTZ, JEAN-PIERRE, MAUREL, PHILIPPE, GARCIA, JEANARLES
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
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