Integrated semiconductor diode

A diode integrated on semiconductor material with BCD technology and of the type provided on a bulk (2) having a first type of conductivity inside a retention region (8) having a second type of conductivity. The diode comprises also a buried anode region (4) having a first type of conductivity and a cathode region (12) having a second type of conductivity. Said cathode region (12) comprises an epitaxial layer (6) located above the buried anode region (4) and a high dope region (11) provided inside the epitaxial layer (6). The buried anode region (4) comprises depressions (5) opposite which is located the high dope region (11) with said depressions (5) being achieved by the intersection of lateral diffusions of distinct and adjacent portions of the buried anode region (4).