SiGe thin film semiconductor device with SiGe layer structure and method of fabrication

Silicon germanium (SiGe) as a gate or interconnection covered with low temperature wet oxide: SixG1-xO2. The silicon surface (source and drain) is not oxided.

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1. Verfasser:	TSUTSU, HIROSHI
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	TSUTSU, HIROSHI
description	Silicon germanium (SiGe) as a gate or interconnection covered with low temperature wet oxide: SixG1-xO2. The silicon surface (source and drain) is not oxided.
format	Patent
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language	eng ; fre ; ger
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SiGe thin film semiconductor device with SiGe layer structure and method of fabrication
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