SiGe thin film semiconductor device with SiGe layer structure and method of fabrication

SiGe thin film semiconductor device with SiGe layer structure and method of fabrication

Silicon germanium (SiGe) as a gate or interconnection covered with low temperature wet oxide: SixG1-xO2. The silicon surface (source and drain) is not oxided.

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Bibliographische Detailangaben
1. Verfasser: TSUTSU, HIROSHI
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Silicon germanium (SiGe) as a gate or interconnection covered with low temperature wet oxide: SixG1-xO2. The silicon surface (source and drain) is not oxided.