An apparatus for holding a substrate during processing with a corrosive gas

The disclosure relates to a corrosion resistant electrostatic chuck 10 for holding a silicon wafer 18 during processing with a corrosive gas and having an electrically insulative layer 12 thereon protected from corrosion by a guard 14. The insulative layer 12 has a top surface 20 covered by the sili...

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Bibliographische Detailangaben
Hauptverfasser:	TANASE, YOSHI, SHAMOUILIAN, SHAMOUIL
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The disclosure relates to a corrosion resistant electrostatic chuck 10 for holding a silicon wafer 18 during processing with a corrosive gas and having an electrically insulative layer 12 thereon protected from corrosion by a guard 14. The insulative layer 12 has a top surface 20 covered by the silicon wafer 18 and an exposed side surface 16. The guard 14 substantially encloses the exposed side surface 16 of the insulative layer 12 and protects the insulative layer 12 from a corrosive gas. The guard 14 is made of sacrificial material that corrodes at least as fast as the insulative layer 12 corrodes when exposed to the corrosive gas. The sacrificial material positioned near the exposed side surface 16 corrodes and reduces the concentration of the corrosive gas at the exposed side surface 16, thereby reducing the rate of corrosion of the insulative layer 12.