Diffusion process for integrated circuits

The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 micrometres or less. The substrate (10) also has a silicon dioxide material (60) thereon. A dopant source (20) is applied over the substrate. The substrate is then rapid thermal annealed to d...

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Bibliographische Detailangaben
Hauptverfasser:	LUFTMAN, HENRY STEVEN, WATTS, RODERICK KENT
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention is directed to a process for fabricating a device with a junction thereon with a depth of 0.06 micrometres or less. The substrate (10) also has a silicon dioxide material (60) thereon. A dopant source (20) is applied over the substrate. The substrate is then rapid thermal annealed to drive the dopant into the substrate. The dopant source is then removed from the substrate using an etchant that does not contain a significant amount of HF.