Method of forming Si-O containing coatings
A coating contg. Si-O is formed on an electronic substrate by a method comprising: (i) coating the substrate with hydrogen silsesquioxane resin, and (ii) converting the coating to a Si-O-contg. ceramic by pyrolysing in an atmos. to which H2 is introduced during the conversion. The resin comprises at...
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Sprache: | eng ; fre ; ger |
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Zusammenfassung: | A coating contg. Si-O is formed on an electronic substrate by a method comprising: (i) coating the substrate with hydrogen silsesquioxane resin, and (ii) converting the coating to a Si-O-contg. ceramic by pyrolysing in an atmos. to which H2 is introduced during the conversion. The resin comprises at least 75% polymeric species of 1200-100,000 MW and is applied as a soln. from which the solvent is then evapd. The substrate is heated at 50-1000 deg.C for less than 6 hr. The atmos. contains air, O2, oxygen plasma, O3, an inert gas, ammonia, amines, moisture or N2O, and the H2 content is 1-30 vol.% and is esp. 5 vol.% max. The resin contains a modifying ceramic oxide precursor comprising a Ti, Zr, Al, Ta, V, Nb, B or P cpd. contg. a hydrolysable alkoxy or acyloxy group; the ceramic oxide is 0.1-30% of the SiO2 coating. The coating also contains 5-1000 ppm Pt, Rh or Cu catalyst. |
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