PROCESS FOR REDUCING DAMAGE SUSCEPTIBILITY IN OPTICAL-QUALITY CRYSTALS

A process is disclosed for treating a crystal of MTiOXO4 (wherein M is selected from the group consisting of K, Rb, Tl and NH4 and mixtures thereof and X is selected from the group consisting of P and As and mixtures thereof) which has crystal structure deficiencies of M throughout the crystal, by i...

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Bibliographische Detailangaben
Hauptverfasser:	MORRIS, PATRICIA, A, ROELOFS, MARK, G
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A process is disclosed for treating a crystal of MTiOXO4 (wherein M is selected from the group consisting of K, Rb, Tl and NH4 and mixtures thereof and X is selected from the group consisting of P and As and mixtures thereof) which has crystal structure deficiencies of M throughout the crystal, by immersing the crystal in molten salt consisting essentially of at least one low melting salt of one or more monovalent cations selected from the group consisting of Rb, K, Cs and Tl for a time sufficient to decrease the optical damage susceptibility throughout the crystal.