Dielectric thin film device and manufacturing method thereof

A dielectric thin film device is constructed by a dielectric thin film (5) of a lead erbium zirconate titanate represented as (Pb1-yEry) (ZrxTi1-x)O3 in which 0 < x < 1 and 0 < y < 1. The film element (5) may include a thermally grown silicon dioxide film (2), a titanium film (3), a plat...

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Bibliographische Detailangaben
Hauptverfasser:	MASUDA, YOSHIYUKI, OGIMOTO, YASUSHI, OOTANI, NOBORU
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	A dielectric thin film device is constructed by a dielectric thin film (5) of a lead erbium zirconate titanate represented as (Pb1-yEry) (ZrxTi1-x)O3 in which 0 < x < 1 and 0 < y < 1. The film element (5) may include a thermally grown silicon dioxide film (2), a titanium film (3), a platinum lower electrode (4), a film (5) of lead erbium zirconate titanate represented as (Pb1-yEry) (ZrxTi1-x)O3 in which 0.45