Multiple-metal-level integrated device and fabrication process thereof

An integrated device (1) comprising two metal levels (6, 8) separated by a layer of insulating material (3) and connected (10) electrically at respective contact pads (5, 7) located one over the other. The two pads (5, 7) are connected electrically by a number of parallel contact regions (10) having...

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Bibliographische Detailangaben
Hauptverfasser:	CAPRILE, CANDIDA, DE SANTI, GIORGIO
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An integrated device (1) comprising two metal levels (6, 8) separated by a layer of insulating material (3) and connected (10) electrically at respective contact pads (5, 7) located one over the other. The two pads (5, 7) are connected electrically by a number of parallel contact regions (10) having a much smaller cross sectional area as compared with the contact pads (5, 7). The contact regions (10) are so formed as to terminate close to the side of the lower contact pad (5) from which a respective metal line (4) extends, and are covered by the final passivation layer (12).