Method of plasma chemical vapor deposition of layer with improved interface

The present invention is directed to a method of improving the interface between a surface and a layer which is deposited on the surface. The surface can be the surface of a body (38) or the surface of a layer deposited on a body (38). The surface is subjected to the plasma of an inactive gas which...

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Bibliographische Detailangaben
Hauptverfasser:	MAYDAN, DAN, FENG, GUOFU JEFF, KOLLRACK, MARC MICHAEL, LAW, KAM, LEE, ANGELA T, TAKEHARA, TAKAKO, ROBERTSON, ROBERT, CONNOLLY, ROBERT
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention is directed to a method of improving the interface between a surface and a layer which is deposited on the surface. The surface can be the surface of a body (38) or the surface of a layer deposited on a body (38). The surface is subjected to the plasma of an inactive gas which does not adversely affect the surface or deposit a layer thereon. Then the surface is subjected to a plasma of a deposition gas which causes the deposition gas to decompose and deposit a layer on the surface.