Transistor having a base ballast impedance

Transistor having a base ballast impedance

Generally, and in one form of the invention a semiconductor device 12 is presented comprising: a transistor 14 comprising an emitter finger 10 and a base finger 18; and a ballast impedance 16 connected to the base finger 18. Other devices and methods are also disclosed.

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Hauptverfasser: KHATIBZADEH ALI M, LIU WILLIAM UEIUNG
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KHATIBZADEH ALI M
LIU WILLIAM UEIUNG
description Generally, and in one form of the invention a semiconductor device 12 is presented comprising: a transistor 14 comprising an emitter finger 10 and a base finger 18; and a ballast impedance 16 connected to the base finger 18. Other devices and methods are also disclosed.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Transistor having a base ballast impedance
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