Transistor having a base ballast impedance
Generally, and in one form of the invention a semiconductor device 12 is presented comprising: a transistor 14 comprising an emitter finger 10 and a base finger 18; and a ballast impedance 16 connected to the base finger 18. Other devices and methods are also disclosed.
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| Hauptverfasser: | , |
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | Generally, and in one form of the invention a semiconductor device 12 is presented comprising: a transistor 14 comprising an emitter finger 10 and a base finger 18; and a ballast impedance 16 connected to the base finger 18. Other devices and methods are also disclosed. |
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