Induction plasma source

An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil (18) in an expanding spiral pattern about the vacuum chamber (30) containing a semiconductor wafer supported by a platen (40). The windings of the induction coil follow the contour of a hem...

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Bibliographische Detailangaben
Hauptverfasser:	BENZING, JEFFREY C, ROUGH, J. KIRKWOOD H, BROADBENT, ELIOT K
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil (18) in an expanding spiral pattern about the vacuum chamber (30) containing a semiconductor wafer supported by a platen (40). The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source (410) having a frequency of about 450 KHz and a power in the range of 200-2000 watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source (420) independently adjusts the bias voltage on the wafer.