Deposition of layers at high specific electric conductivity
Beschrieben wird ein Verfahren zur Abscheidung Metall enthaltender Schichten hoher spezifischer elektrischer Leitfähigkeit unter Zersetzung metallorganischer Verbindungen in wasserstoffhaltiger Gas- oder Dampfphase mittels eines Plasmas. Dabei wird unter Aufnahme eines OES-Spektrums die Energiedicht...
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creator | MUELLER, JOERG HAMERICH, ANDREAS LOTTERMOSER, LARS DOELLEIN, GUENTHER |
description | Beschrieben wird ein Verfahren zur Abscheidung Metall enthaltender Schichten hoher spezifischer elektrischer Leitfähigkeit unter Zersetzung metallorganischer Verbindungen in wasserstoffhaltiger Gas- oder Dampfphase mittels eines Plasmas. Dabei wird unter Aufnahme eines OES-Spektrums die Energiedichte des Plasmas optimiert. Es lassen sich so z.B. festhaftende Leiterbahnen erzeugen, deren Breite kleiner als 50 nm ist und deren Verhältnis von Höhe zu Breite größer 1 ist. Offenbart wird ferner ein Verfahren zur Optimierung der Abscheidung von Metall enthaltenden Schichten mit hoher spezifischer Leitfähigkeit sowie ein bei dem erfindungsgemäßen Verfahren erhältlicher Verbundkörper aus Polymer und Metallschicht.
A description is given of a process for the deposition of metal-containing layers having high electrical conductivity by decomposing organometallic compounds by means of a plasma in a hydrogen-containing gas or vapour phase. The energy density of the plasma is optimized by recording an optical emission spectrum. In this way, it is possible to produce, for example, firmly adhering conductor tracks whose width is less than 50 nm and whose height to width ratio is greater than 1. A method of optimizing the deposition of metal-containing layers having high conductivity is furthermore disclosed, as is a composite body which can be obtained by the method according to the invention and comprises a polymer and a metal layer. |
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A description is given of a process for the deposition of metal-containing layers having high electrical conductivity by decomposing organometallic compounds by means of a plasma in a hydrogen-containing gas or vapour phase. The energy density of the plasma is optimized by recording an optical emission spectrum. In this way, it is possible to produce, for example, firmly adhering conductor tracks whose width is less than 50 nm and whose height to width ratio is greater than 1. A method of optimizing the deposition of metal-containing layers having high conductivity is furthermore disclosed, as is a composite body which can be obtained by the method according to the invention and comprises a polymer and a metal layer.</description><edition>5</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940427&DB=EPODOC&CC=EP&NR=0594032A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940427&DB=EPODOC&CC=EP&NR=0594032A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MUELLER, JOERG</creatorcontrib><creatorcontrib>HAMERICH, ANDREAS</creatorcontrib><creatorcontrib>LOTTERMOSER, LARS</creatorcontrib><creatorcontrib>DOELLEIN, GUENTHER</creatorcontrib><title>Deposition of layers at high specific electric conductivity</title><description>Beschrieben wird ein Verfahren zur Abscheidung Metall enthaltender Schichten hoher spezifischer elektrischer Leitfähigkeit unter Zersetzung metallorganischer Verbindungen in wasserstoffhaltiger Gas- oder Dampfphase mittels eines Plasmas. Dabei wird unter Aufnahme eines OES-Spektrums die Energiedichte des Plasmas optimiert. Es lassen sich so z.B. festhaftende Leiterbahnen erzeugen, deren Breite kleiner als 50 nm ist und deren Verhältnis von Höhe zu Breite größer 1 ist. Offenbart wird ferner ein Verfahren zur Optimierung der Abscheidung von Metall enthaltenden Schichten mit hoher spezifischer Leitfähigkeit sowie ein bei dem erfindungsgemäßen Verfahren erhältlicher Verbundkörper aus Polymer und Metallschicht.
A description is given of a process for the deposition of metal-containing layers having high electrical conductivity by decomposing organometallic compounds by means of a plasma in a hydrogen-containing gas or vapour phase. The energy density of the plasma is optimized by recording an optical emission spectrum. In this way, it is possible to produce, for example, firmly adhering conductor tracks whose width is less than 50 nm and whose height to width ratio is greater than 1. A method of optimizing the deposition of metal-containing layers having high conductivity is furthermore disclosed, as is a composite body which can be obtained by the method according to the invention and comprises a polymer and a metal layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2SS3IL84syczPU8hPU8hJrEwtKlZILFHIyEzPUCguSE3OTMtMVkjNSU0uKQIykvPzUkqTSzLLMksqeRhY0xJzilN5oTQ3g4Kba4izhy7QyPjU4oLE5NS81JJ41wADU0sTA2MjR0NjIpQAAGjfL0Y</recordid><startdate>19940427</startdate><enddate>19940427</enddate><creator>MUELLER, JOERG</creator><creator>HAMERICH, ANDREAS</creator><creator>LOTTERMOSER, LARS</creator><creator>DOELLEIN, GUENTHER</creator><scope>EVB</scope></search><sort><creationdate>19940427</creationdate><title>Deposition of layers at high specific electric conductivity</title><author>MUELLER, JOERG ; HAMERICH, ANDREAS ; LOTTERMOSER, LARS ; DOELLEIN, GUENTHER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0594032A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MUELLER, JOERG</creatorcontrib><creatorcontrib>HAMERICH, ANDREAS</creatorcontrib><creatorcontrib>LOTTERMOSER, LARS</creatorcontrib><creatorcontrib>DOELLEIN, GUENTHER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MUELLER, JOERG</au><au>HAMERICH, ANDREAS</au><au>LOTTERMOSER, LARS</au><au>DOELLEIN, GUENTHER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Deposition of layers at high specific electric conductivity</title><date>1994-04-27</date><risdate>1994</risdate><abstract>Beschrieben wird ein Verfahren zur Abscheidung Metall enthaltender Schichten hoher spezifischer elektrischer Leitfähigkeit unter Zersetzung metallorganischer Verbindungen in wasserstoffhaltiger Gas- oder Dampfphase mittels eines Plasmas. Dabei wird unter Aufnahme eines OES-Spektrums die Energiedichte des Plasmas optimiert. Es lassen sich so z.B. festhaftende Leiterbahnen erzeugen, deren Breite kleiner als 50 nm ist und deren Verhältnis von Höhe zu Breite größer 1 ist. Offenbart wird ferner ein Verfahren zur Optimierung der Abscheidung von Metall enthaltenden Schichten mit hoher spezifischer Leitfähigkeit sowie ein bei dem erfindungsgemäßen Verfahren erhältlicher Verbundkörper aus Polymer und Metallschicht.
A description is given of a process for the deposition of metal-containing layers having high electrical conductivity by decomposing organometallic compounds by means of a plasma in a hydrogen-containing gas or vapour phase. The energy density of the plasma is optimized by recording an optical emission spectrum. In this way, it is possible to produce, for example, firmly adhering conductor tracks whose width is less than 50 nm and whose height to width ratio is greater than 1. A method of optimizing the deposition of metal-containing layers having high conductivity is furthermore disclosed, as is a composite body which can be obtained by the method according to the invention and comprises a polymer and a metal layer.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Deposition of layers at high specific electric conductivity |
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