A non-volatile memory cell

A non-volatile memory cell of the present invention includes: a semiconductor layer of a first conductivity type having an upper portion; a source region of a second conductivity type and a drain region of the second conductivity type which are provided in the upper portion of the semiconductor layer at a certain distance from each other; a channel region provided between the source region and the drain region in the upper portion of the semiconductor layer; an insulating film provided on the upper portion of the semiconductor layer, having a first portion covering the source region, a second portion covering the drain region, and a third portion covering the channel region; a first floating gate electrode provided on the first portion of the insulating film; a second floating gate electrode provided on the second portion of the insulating film; and a control gate electrode provided on the third portion of the insulating film and electrically insulated from the first and second floating gate electrodes, wherein at least one of the first portion and the second portion of the insulating film is smaller than that of the third portion of the insulating film, and wherein part of electric carriers in the source region and/or the drain region are injected into the first floating gate electrode and/or the second floating gate electrode through the first portion and/or second portion of the insulating film at the time of writing data.