Method for making a semiconductor device having an anhydrous ferroelectric thin film

A method for making a semiconductor device having an anhydrous ferroelectric thin film obtained from an anhydrous sol-gel solution. An anhydrous PZT sol-gel solution is prepared from Lead (II) Acetate Anhydrous which is thermally reacted with Zirconium and Titanium precursors to form a gel condensate. The sol-gel condensate is prepared without hydrolyzing the sol-gel solution to obtain precursor complexes which do not contain water. The formulation of the sol-gel exclusively by thermal condensation and in the absence of hydrolysis yields an anhydrous amorphous sol-gel having a uniform condensate composition. The anhydrous PZT thin film formed by the anhydrous sol-gel exhibits improved durability and substantially complete low-temperature conversion to the perovskite crystalline phase.