Semiconductor fabrication

The disclosure relates to a system for pumping down pressurized gas residing after shut-off in the piping used to provide a gas flow for backside wafer heating/cooling during the processing of the semiconductor wafer (20). The system includes a valve selectable secondary piping line (70) for equaliz...

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Bibliographische Detailangaben
1. Verfasser:	KRUEGER, GORDON P
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Beschreibung
Zusammenfassung:	The disclosure relates to a system for pumping down pressurized gas residing after shut-off in the piping used to provide a gas flow for backside wafer heating/cooling during the processing of the semiconductor wafer (20). The system includes a valve selectable secondary piping line (70) for equalizing on shut-off any pressure differential occurring in the primary gas flow line (50) between the process chamber (12) and the backside heating element (30). The secondary line runs from an opening (76) in the process chamber wall to a tee-joint (72) installed in the primary flow line immediately downstream of the final isolation valve (42) in the primary line. A valve (78) is installed in the secondary line and is operationally interlocked (80), in an inverse manner, with the isolation valve in the primary line such that when one valve is open the other valve is closed and vice versa.