PHOTORESIST STRIPPER

Photo resist stripper compositions comprising N-alkyl-2-pyrrolidone, 1,2-propanediol and tetraalkylammonium hydroxide. The photoresist strippers are useful at high stripping temperatures (105 DEG C.-125 DEG C.) to remove hard baked photoresist without damaging semiconductor substrates or metallurgy.

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Bibliographische Detailangaben
Hauptverfasser:	HAVAS, JANOS, FITZSIMMONS, JOHN, A, DEAN, ALICIA, MCCORMICK, BARRY, C, SHAH, PROBODH, R
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Photo resist stripper compositions comprising N-alkyl-2-pyrrolidone, 1,2-propanediol and tetraalkylammonium hydroxide. The photoresist strippers are useful at high stripping temperatures (105 DEG C.-125 DEG C.) to remove hard baked photoresist without damaging semiconductor substrates or metallurgy.